Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions

نویسندگان

چکیده

We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV$^-$) centers formed along the tracks swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during growth. Analysis spectra shows NV$^-$ are preferentially within regions where electronic stopping processes dominate and not at end ion range elastic collisions lead to formation vacancies defects. Thermal annealing further increases NV yields after irradiation SHIs high vacancy densities. can be isolated lift-out techniques for explorations color center qubits quasi-1D registers an average qubit spacing a few nanometers order per micrometer 10 30 long percolation chains.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2021

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0036643